ISO/IEC 9594-8 Technical Corrigendum 4-2007 信息技术.开放式系统互联.目录:公开密钥和属性证书框架.技术勘误4

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【英文标准名称】:Informationtechnology-OpenSystemsInterconnection-TheDirectory:Public-keyandattributecertificateframeworks;TechnicalCorrigendum4
【原文标准名称】:信息技术.开放式系统互联.目录:公开密钥和属性证书框架.技术勘误4
【标准号】:ISO/IEC9594-8TechnicalCorrigendum4-2007
【标准状态】:作废
【国别】:国际
【发布日期】:2007-11
【实施或试行日期】:
【发布单位】:国际标准化组织(IX-ISO)
【起草单位】:ISO/IECJTC1
【标准类型】:()
【标准水平】:()
【中文主题词】:合格证书;数据处理;人名地址录;膨胀系数(变形);导则;信息交换;信息技术;计数检查;作标记;网络互连;开式系统;开放系统互连
【英文主题词】:Certificates;Dataprocessing;Directories;Expansion(deformation);Guidelines;Informationinterchange;Informationtechnology;Inspectionbyattributes;Marking;Networkinterconnection;Opensystems;Opensystemsinterconnection;OSI
【摘要】:ThisstandardisInformationtechnology-OpenSystemsInterconnection-TheDirectory:Public-keyandattributecertificateframeworks;TechnicalCorrigendum4.
【中国标准分类号】:L79
【国际标准分类号】:35_100_70
【页数】:12P;A4
【正文语种】:英语


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【英文标准名称】:TestMethodforQuantifyingTungstenSilicideSemiconductorProcessFilmsforCompositionandThickness
【原文标准名称】:定量分析硅化钨半导体加工膜组分和厚度的标准试验方法
【标准号】:ASTMF1894-1998(2003)
【标准状态】:现行
【国别】:
【发布日期】:1998
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.17
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:定量分析;硅化钨分析;背散射分析;金属膜;组分
【英文主题词】:analysisoftungstensilicide;backscatteringanalysis;composition;metallizationfilms;quantitativeanalysis;RBS;Wsix
【摘要】:ThistestmethodcanbeusedtoensureabsolutereproducibilityofWSixfilmdepositionsystemsoverthecourseofmanymonths.Thetimespanofmeasurementsisessentiallythelifeofmanyprocessdepositionsystems.ThistestmethodcanbeusedtoqualifynewWSixdepositionsystemstoensureduplicabilityofexistingsystems.Thistestmethodisessentialforthecoordinationofglobalsemiconductorfabricationoperationsusingdifferentanalyticalservices.Thistestmethodallowssamplesfromvariousdepositionsystemstobeanalyzedatdifferentsitesandtimes.Thistestmethodisthechosencalibrationtechniqueforavarietyofanalyticaltechniques,including,butnotlimitedto:5.3.1Electronspectroscopyforchemicalanalysis(ESCAorXPS),5.3.2Augerelectronspectroscopy(AES),5.3.3Fouriertransforminfraredredspectroscopy(FTIR),5.3.4Secondaryionmassspectrometry(SIMS),and5.3.5Electrondispersivespectrometry(EDS)andparticleinducedx-rayemission(PIXE).1.1Thistestmethodcoversthequantitativedeterminationoftungstenandsiliconconcentrationsintungsten/silicon(WSIx),semiconductorprocessfilmsusingRutherfordBackscatteringSpectrometry(RBS).(1)ThistestmethodalsocoversthedetectionandquantificationofimpuritiesinthemassrangefromphosphorusA(31atomicmassunits(amu)toantimony(122amu).1.2Thistestmethodcanbeusedfortungstensilicidefilmspreparedbyanydepositionorannealingprocesses,orboth.Thefilmmustbeauniformfilmwithanarealcoveragegreaterthantheincidentionbeam(~2.5mm).1.3Thistestmethodaccuratelymeasureshefollowingfilmproperties:silicon/tungstenratioandvariationswithdepth,tungstendepthprofilethroughoutfilm,WSIx,filmthickness,argonconcentrations(ifpresent),presenceofoxideonsurfaceofWSIxfilms,andtransitionmetalimpuritiestodetectionlimitsof1x1014atoms/cm2.1.4Thistestmethodcandetectabsolutedifferencesinsiliconandtungstenconcentrationsof+/-3and+/-1atomicpercent,respectively,measuredfromdifferentsamplesinseparateanalyses.relativevariationsinthetungstenconcentrationindepthcanbedetectedto+/-0.2atomicpercentwithadepthresolutionof+/-70A.1.5ThistestmethodsupportsandassistsinqualifyingWSIxfilmsbyelectricalresistivitytechniques.1.6ThistestmethodcanbeperformedforWSIxfilmsdepositedonconductingorinsulatingsubstrates.1.7ThistestmethodisusefulforWSIxfilmsbetween20and400mmwithanarealcoverageofgreaterthan1by1mm.1.8Thistestmethodisnon-destructivetothefilmtotheextentofsputtering.1.9Astatisticalprocesscontrol(SPC)ofWSIxfilmshasbeenmonitoredsince1993withreproducibilityto+/-4%.1.10ThistestmethodproducesaccuratefilmthicknessesbymodelingthefilmdensityoftheWSIxfilmasWSI2(hexagonal)plusexcesselementalSI2.Themeasuredfilmthicknessisalowerlimittotheactualfilmthicknesswithanaccuracylessthan10%comparedtoSEMcross-sectionmeasurements(see13.4)1.11Thistestmethodcanbeusedtoanalyzefilmsonwholewafersupto300mmwithoutbreakingthewafers.Thesitesthatcanbeanalyzedmayberestrictedtoconcentricringsnearthewaferedgesfor200-mmand300-mmwafers,dependingonsystemcapabilities.1.12Thisstandarddoesnotpurporttoaddressallofthesafetyconcerns,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesanddeterminetheapplicabilityofregulatorylimitationspriortouse.ThereaderisreferencedtoSection8ofthistestmethod......
【中国标准分类号】:H82
【国际标准分类号】:29_045
【页数】:7P.;A4
【正文语种】:


【英文标准名称】:StandardSpecificationforOxygenConcentratorsforDomiciliaryUse
【原文标准名称】:家用氧浓缩器标准规范
【标准号】:ASTMF1464-1993(2005)
【标准状态】:现行
【国别】:
【发布日期】:1993
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F29.14
【标准类型】:(Specification)
【标准水平】:()
【中文主题词】:供氧设备;家用;医学科学
【英文主题词】:
【摘要】:1.1Thisclauseofthegeneralstandardappliesexceptasfollows(replacement):Thisparticularspecificationspecifiessafetyrequirementsforoxygenconcentratorsasdefinedin.Thisspecificationdoesnotapplytooxygenconcentratorsintendedtosupplygastoseveralpatientsviaapipedmedicalgasinstallationortothoseintendedforuseinthepresenceofflammableanaestheticorcleaningagents,orboth.1.2ThevaluesstatedinSIunitsaretoberegardedasthestandard.
【中国标准分类号】:C47
【国际标准分类号】:
【页数】:8P.;A4
【正文语种】: